Assured Systems is often explaining to customers the difference in solid state drives available for the multitude of solutions we cater to. Here's a quick explanation of the difference between SLC and MLC technology, and why if you are writing to disk frequently, the SLC could be your go-to option.
How SLC and MLC work
In the Single Level Cell (SLC) method, a
memory cell stores 1 bit, 0 or 1. On the other hand, cells in Multi-Level Cell record 4
states in 2 bits (i.e. 00, 01, 10 and 11), which means it takes longer to
differentiate each state and is less stable compared to SLC due to issues
including information interference. But MLC does have an advantage in that it
can double memory space.
In the case of SLC,
which stores only two types of information (0 and 1), there is a much larger
margin in which 0 and 1 are separated. That is why SLC is more reliable
compared to MLC. What’s more, SLC needs only to distinguish a single bit
between 0 and 1 and takes less time to read and write. On the contrary, MLC
must distinguish between 4 states, which leads to a longer process time, a less
generous margin and a shorter lifespan.
Features of SLC
- Faster
than MLC
- More
reliable
- Less
risk of losing data when power abruptly goes out
- Longer
life (Lasts more than 100,000 program erase cycles apposed to 1,000/3,000
for MLC)
Features of MLC
- Able to achieve higher
capacities
- Geometry is constantly
reduced meaning sales life cycle is short but is on the forefront of
technology releases.
- Price is approximately
1/6 of SLC
- Extended temperatures options can be difficult to source and are only offered from a few select manufacturers.
To sum this up it is all down to the amount of Program Erase Cycles (P/E) you can write to each type of flash which intern equals more endurance.
Consumer TLC = 500 P/E
or below
Consumer MLC = 1000 P/E or below
Industrial MLC = 3k P/E
Industrial SLC = 100k P/E
Consumer MLC = 1000 P/E or below
Industrial MLC = 3k P/E
Industrial SLC = 100k P/E
What is a Program
Erase (P/E) Cycle you ask?
A solid-state-storage
program-erase cycle is a sequence of events in which data is written to
solid-state NAND flash memory cell (such as the type found in a so-called flash
or thumb drive), then erased, and then rewritten. Program-erase (PE) cycles can
serve as a criterion for quantifying the endurance of a flash storage device.
Flash memory devices
are capable of a limited number of PE cycles because each cycle causes a small
amount of physical damage to the medium. This damage accumulates over time,
eventually rendering the device unusable. The number of PE cycles that a given
device can sustain before problems become prohibitive varies with the type of
technology.
Why use Industrial SLC/MLC Flash Summary
:
- Fixed bill of materials
- Once you can confirm approval
with an industrial part in your application we will lock down the
components used by using a custom part code.
- Part Notifications
- All Industrial parts
come with a 3/6 month PCN should a single component change on-board a
product, this will allow you to test and approve another product saving
you being caught out with an incompatible product.
- Obsolescence Management
- In advance 12/6 month notification should a part become obsolete.
About Assured Systems
Assured Systems is a leading technology company offering high quality and innovative applied computing solutions to the embedded, industrial, and digital-out-of-home markets around the world via offices in Europe and the Americas.
Our impressive product portfolio includes a full range of Panel PCs, Human Machine Interfaces, Single Board Computers, Fanless Computers, Rugged Laptops & Tablets, Digital Signage solutions, LCD Displays & Touchscreens, Rackmount Servers, and Digital & Analogue Data Acquisition solutions. Our technology can be found in a diverse range of applications throughout our key verticals including energy, transportation, automation, process control, defence, medical, asset tracking, narrowcasting, gaming and multimedia.
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